Formation of p-n⁺ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation

We report the fabrication of p-n+ diamond homojunction through an innovative approach laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top p-type substrate to form homojunction. The current–voltage measurements at room temperature confirmed induced n+ and showed exceptional rectification properties ideality factor 1.07, excellent low on-resistance 3.7 × 10−2 Ωcm2, current density over 260 Acm−2 forward-biasing 10 V. Furthermore, undetectable leakage-current provides ratio exceeding 1010 ±6 V, promoting junction UV detection applications.